IRF510PBF N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

Specifications

Channel Type N
Maximum Continuous Drain Current 5.6 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 540 mΩ
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 43 W
Transistor Material Si
Typical Turn-On Delay Time 6.9 ns
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 8.3 nC @ 10 V
Typical Input Capacitance @ Vds 180 pF@ 25 V
Typical Turn-Off Delay Time 15 ns
Height 9.01mm
Maximum Operating Temperature +175 °C
Length 10.41mm
Dimensions 10.41 x 4.7 x 9.01mm
Width 4.7mm
Number of Elements per Chip 1